Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Reliability Assessment on Highly Manufacturable MOSFETs with Metal Gate and Hf based Gate Dielectrics
By: Kirsch, R.P.; Siddarth Krishnan; Bersuker, G.; Chang Yong Kang; Heh, D.; Neugroschel, A.; Young, C.; Rino Choi; Jammy, R.; Lee, B.H.; Song, S.C.;
2007 / IEEE / 978-1-4244-1014-9
This item was taken from the IEEE Conference ' Reliability Assessment on Highly Manufacturable MOSFETs with Metal Gate and Hf based Gate Dielectrics ' With scaling of the high-k gate dielectric thickness, NBTI, which is greater contributed by the interface degradation, becomes a bigger reliability issue than PBTI. For correct reliability analysis, it was shown that the measured VTH and DA values should be adjusted by their initial shifts during the stress. After the adjustment, NBTI degradation characteristics of devices with high-k dielectric become similar to that with SiO
High-k Gate Dielectrics
High K Dielectric Materials
Equivalent Oxide Thickness
High-k Dielectric Thin Films
Semiconductor Device Reliability