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Reliability Assessment on Highly Manufacturable MOSFETs with Metal Gate and Hf based Gate Dielectrics

By: Kirsch, R.P.; Siddarth Krishnan; Bersuker, G.; Chang Yong Kang; Heh, D.; Neugroschel, A.; Young, C.; Rino Choi; Jammy, R.; Lee, B.H.; Song, S.C.;

2007 / IEEE / 978-1-4244-1014-9

Description

This item was taken from the IEEE Conference ' Reliability Assessment on Highly Manufacturable MOSFETs with Metal Gate and Hf based Gate Dielectrics ' With scaling of the high-k gate dielectric thickness, NBTI, which is greater contributed by the interface degradation, becomes a bigger reliability issue than PBTI. For correct reliability analysis, it was shown that the measured VTH and DA values should be adjusted by their initial shifts during the stress. After the adjustment, NBTI degradation characteristics of devices with high-k dielectric become similar to that with SiO2 dielectric. Since high-k gate stack consists of multiple layers including SiO2-like interface and crystallized high-k dielectric, the breakdown of high-k gate stack shows more complex features than that of SiO2