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Formation of Shallow Junctions Using Ge-Si Heterostructures for High Mobility Channel MOSFETs
By: Byoung Hun Lee; Hsing-Huang Tseng; Sehoon Lee; Kalra, P.; Song, S.C.; Harris, R.; Banerjee, S.; Chang Yong Kang; Ji-Woon Yang; Won-Ho Choi; Kyong-Taek Lee; Hi-Deok Lee; Majhi, P.; Jungwoo Oh; Jammy, R.;
2007 / IEEE / 1-4244-1103-3
This item was taken from the IEEE Conference ' Formation of Shallow Junctions Using Ge-Si Heterostructures for High Mobility Channel MOSFETs ' Shallow junctions formed on thin Ge-on-Si heterostructures are characterized in this paper. The reverse leakage current showed a strong dependence on the Ge thickness, which is believed to be due to the different activation temperature of ions implanted in the Ge layers and in the Si substrates. Ge pMOSFETs fabricated on thin Ge layers showed more significant improvement in short channel effects (SCEs) and subthreshold swing (SS) characteristics than those on thick Ge layers. Ge pMOSFETs on thin Ge are a very promising device structure for future technology nodes because of their superior immunity to short channel effects and potential drivability due to their high mobility channel.
Short Channel Effects
Reverse Leakage Current
High Mobility Channel
Ge-si - Interface