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A Compact Thermal-Via Packaging Design of GaInP/GaAs Collector-Up HBTs in Small High-Power Amplifiers
By: Lee, P.H.; Tseng, H.C.; Chou, J.H.;
2007 / IEEE / 1-4244-0874-1
Description
This item was taken from the IEEE Conference ' A Compact Thermal-Via Packaging Design of GaInP/GaAs Collector-Up HBTs in Small High-Power Amplifiers ' We model the thermal performance of the large thermal via which under the collector-up heterojunction bipolar transistor (HBT) by using a finite element method. A compact thermal-via packaging of GaInP/GaAs collector-up HBTs has been designed and calculated. The results indicate that the configuration can be further reduced by 29% to meet the requirement of small high-power amplifiers for cellular-phone communication systems.
Related Topics
Gallium Compounds
Heterojunction Bipolar Transistors
Iii-v Semiconductors
Indium Compounds
Microwave Amplifiers
Microwave Bipolar Transistors
Power Amplifiers
Power Bipolar Transistors
Semiconductor Device Packaging
Compact Thermal-via Packaging Design
Collector-up Hbt
Heterojunction Bipolar Transistor
High-power Amplifiers
Finite Element Method
Cellular-phone Communication Systems
Packaging
Gallium Arsenide
High Power Amplifiers
Heterojunction Bipolar Transistors
Finite Element Methods
Thermal Resistance
Temperature Distribution
Microwave Amplifiers
Fingers
Microwave Transistors
Gallium Arsenide
Finite Element Analysis
Thermal Management (packaging)
Engineering
Gainp-gaas
