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Test Structures for Accurate UHF C-V Measurements of Nano-Scale CMOSFETs with HfSiON and TiN Metal Gate
By: Kyong-Taek Lee; Yoon-Ha Jeong; Hi-Deok Lee; In-Shik Han; Byoung Hun Lee; Seung-Chul Song; Harris, R.; Rino Choi; Dawei Heh; Brown, G.A.; Schmitz, J.;
2007 / IEEE / 1-4244-0780-X
This item was taken from the IEEE Conference ' Test Structures for Accurate UHF C-V Measurements of Nano-Scale CMOSFETs with HfSiON and TiN Metal Gate ' Test structures for accurate UHF capacitance -voltage (C-V) measurements of high performance CMOSFETs with Hf-based high-k dielectric and TiN metal gate are analyzed. It is shown that series resistance or substrate resistance between the channel region and body contact plays a role in UHF C-V measurements. The substrate resistance beneath the gate region also impacts accurate UHF C-V measurements. Therefore, minimization of series resistance through short gate lengths with a minimum distance between the source/drain and body contact is highly desired for an accurate evaluation of gate dielectric thickness using UHF C-V measurements.
Hf-based High-k Dielectric Gate
Tin Metal Gate
Series Resistance Minimization
Gate Dielectric Thickness
Electrical Resistance Measurement
Semiconductor Device Testing
Semiconductor Device Measurement
High-k Dielectric Thin Films
Uhf Capacitance-voltage Measurements