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The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown
By: Krishnan, A.T.; Nicollian, P.E.; Reddy, V.K.; Bowen, C.; Chakravarthi, S.; Khamankar, R.B.; Chancellor, C.A.;
2007 / IEEE / 1-4244-0918-7
This item was taken from the IEEE Conference ' The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown ' This paper reviews recent experiments that have shown that the probable mechanism for low voltage trap generation and dielectric breakdown is anode hydrogen release. Vibrational excitation of silicon-hydrogen bonds is the process that provides the most plausible explanation for the existence of a power law model for TDDB.