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Comparison of Plasma-Induced Damage in SIO2/TIN and HFO2/TIN Gate Stacks

By: Lee, J.C.; Park, H.K.; Song, S.C.; Choi, R.; Lee, B.H.; Zhu, F.; Bersuker, G.; Young, C.D.; Matthews, K.;

2007 / IEEE / 1-4244-0918-7

Description

This item was taken from the IEEE Conference ' Comparison of Plasma-Induced Damage in SIO2/TIN and HFO2/TIN Gate Stacks ' SiO2 and HfO2 gate dielectrics with TiN electrodes were subjected to an aggressive post-fabrication plasma exposure. A comparison of plate and comb antenna structures before and after exposure demonstrated that the plate antennae structures demonstrate evidence of plasma-induced damage while the comb structures did not. The physical origin of PD in SiO2 devices was found to be the amphoteric interface states, while the primary effect in HfO2 devices was charges trapped in the bulk of the high-¿ film.