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Pulsed High-Voltage Modulators Using Power Semiconductor Devices

By: Nakanishi, K.; Yoshida, S.; Shimizu, N.; Honma, H.; Sugiyama, A.; Jiang, W.; Takayama, K.; Nakahiro, K.; Wake, M.;

2006 / IEEE / 1-4244-0018-X

Description

This item was taken from the IEEE Conference ' Pulsed High-Voltage Modulators Using Power Semiconductor Devices ' Pulsed high-voltage modulators have been developed by using different kinds of power semiconductor devices. MOSFET, SIThy, and SiC-JFET are studied in switching characteristics for applications in MHz high-voltage modulators, which are expected to have applications in power supplies for particle accelerators.