Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap NVMs

By: Rochat, N.; Martinez, E.; Brianceau, P.; Gely, M.; Molas, G.; Bocquet, M.; Buckley, J.; Deleonibus, S.; DeSalvo, B.; Lombardo, S.; Corso, D.; Bongiorno, C.; Pananakakis, G.; Ghibaudo, G.; Leroux, C.; Vidal, V.; Toffoli, A.; Colonna, J.P.; Grampeix, H.; Martin, F.;

2006 / IEEE / 1-4244-0438-X

Description

This item was taken from the IEEE Conference ' In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap NVMs ' In this paper, different Hf-based oxides (HfO2, HfSiO under several annealing conditions, HfSiON, HfAlO with various compositions) are simultaneously considered as storage layers of charge-trap memories. Based on material characterization analyses, electrical data of memory cells, physical modeling of charge-trap devices, we show that a strict relationship exists between the crystal structure of the storage layer and the memory performances. The obtained results clearly demonstrate the high interest of HfO2 dielectric as possible storage layer of future NROM-like memory devices.