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Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices

By: Han, J.P.; Utomo, H.; Ieong, M.; Sudijono, J.; Ku, J.H.; Shum, D.; Hierlemann, M.; Amos, R.; Chiulli, G.; Lindsay, R.; Kim, S.D.; Loesing, R.; Burns, L.; Turansky, A.; Madan, A.; St Lawrence, B.; Davis, R.; Murphy, R.; Li, J.; Li, J.; Kim, J.J.; Zhuang, H.; Mishra, S.; Schepis, D.; Gutmann, A.; Teo, L.W.; Rovedo, N.; Luo, Z.; Krishnasamy, R.; Stierstorfer, R.; Chong, Y.F.; Fang, S.; Ng, H.; Holt, J.; Adam, T.N.; Kempisty, J.;

2006 / IEEE / 1-4244-0438-X

Description

This item was taken from the IEEE Conference ' Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices ' We present an advanced CMOS integration scheme based on embedded SiGe (eSiGe) with a novel graded germanium process. The retention of channel strain enabled a pFET performance gain of 15% over a non-graded eSiGe control. When combined with a compressive stress liner (CSL), the pFET drive current reached 770 ¿A/¿m at Ioff=100nA/¿m with VDD=1V. Competitive nFET performance was maintained. Parasitics such as silicide and junction characteristics were not degraded.