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Simplified manufacturable band edge metal gate solution for NMOS without a capping layer
By: Lee, B.H.; Majhi, P.; Song, S.C.; Kirsch, P.D.; Ju, B.S.; Hussain, M.; Park, H.B.; Park, C.S.; Heh, D.; Luan, H.; Choi, K.; Krishnan, S.; Wen, H.C.; Alshareef, H.; Harris, H.R.; Jammy, R.;
2006 / IEEE / 1-4244-0438-X
This item was taken from the IEEE Conference ' Simplified manufacturable band edge metal gate solution for NMOS without a capping layer ' We describe an NMOS band edge solution that uses a metal gate doped with Lanthanide elements to achieve work functions as low as 4.05eV. The capping interlayers used in previous works are no longer necessary, and metal gate implementation became much simpler. Using this electrode, low Vth value and high mobility suitable for high performance devices are achieved at a practical EOT 0f 8Å.