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A Novel Bias Temperature Instability Characterization Methodology for High-k MOSFETs
By: Bersuker, G.; Heh, D.; Byoung Hun Lee; Young, C.D.; Choi, R.;
2006 / IEEE / 1-4244-0301-4
This item was taken from the IEEE Conference ' A Novel Bias Temperature Instability Characterization Methodology for High-k MOSFETs ' A characterization methodology based on a single pulse measurement for evaluating the bias temperature instability (BTI) of high-k devices has been developed. It is shown that the time dependence of the threshold voltage instability extracted from conventional DC and pulse Id-Vg measurements can be affected by the fast charge relaxation process leading to erroneous predictions of lifetime. The proposed methodology separates the relaxation effects associated with the fast transient and slower constant voltage charging and allows extracting the dependence of intrinsic threshold voltage on stress time.
Threshold Voltage Instability
High K Dielectric Materials
High-k Gate Dielectrics
Bias Temperature Instability Characterization Methodology
Fast Charge Relaxation
Single Pulse Measurement