Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Negative Bias Stressing Interface Trapping Centers in Metal Gate Hafnium Oxide Field Effect Transistors Using Spin Dependent Recombination

By: Bersuker, G.; Campbell, J.P.; Lenahan, P.M.; Cochrane, C.J.; Neugroschel, A.;

2006 / IEEE / 1-4244-0296-4

Description

This item was taken from the IEEE Conference ' Negative Bias Stressing Interface Trapping Centers in Metal Gate Hafnium Oxide Field Effect Transistors Using Spin Dependent Recombination ' We combine conventional metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance (ESR) measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO2 pMOS field effect transistors (pMOSFETs). The spectra were found to be quite different from those generated by NBTI in conventional Si/SiO2 based devices. The defect spectra generated by long term stressing differ from the short term stressing signals and are somewhat similar to those observed in plasma nitrided oxide Si/SiO2 based devices. These traces are similar in that their ESR g values are virtually identical. Our results strongly suggest that, in these HfO2 based devices, NBTI defects are located in the interfacial SiO2 layer.