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Comparison of novel BTI measurements for high-k dielectric MOSFETs
2006 / IEEE / 1-4244-0161-5
This item was taken from the IEEE Conference ' Comparison of novel BTI measurements for high-k dielectric MOSFETs '
Threshold Voltage Instability Behavior
Bias Temperature Instability Measurements
High-k Gate Dielectrics
High-k Dielectric Thin Films
High-k Dielectric Mosfet