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A novel approach to compare the charge buildup induced by co-60 and X-ray radiation in SOI buried oxides
By: Zhang, E.X.; Zhang, Zh.X.; Tian, H.; Wang, X.; Yu, W.J.; Yang, H.; He, W.;
2006 / IEEE / 1-4244-0161-5
This item was taken from the IEEE Conference ' A novel approach to compare the charge buildup induced by co-60 and X-ray radiation in SOI buried oxides '
Electron-hole Charge Yield
Dose Enhancement Effects
Soi Nmos Transistors
Back-gate Threshold Shifts
Radiation Hardening (electronics)
Soi Buried Oxides