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Decoupling of cold carrier effects in hot carrier reliability of HfO2 gated nMOSFETs
By: Lee, J.C.; Byoung Hun Lee; Bersuker, G.; Young, C.D.; Hwang, H.; Seung Chul Song; Rino Choi; Hokyung Park; Man Chang;
2006 / IEEE / 0-7803-9498-4
This item was taken from the IEEE Conference ' Decoupling of cold carrier effects in hot carrier reliability of HfO2 gated nMOSFETs ' To understand hot carrier effects on high-k dielectrics without cold carrier trapping, we have investigated hot carrier induced damage with channel and substrate hot carrier stresses. Comparing substrate hot carrier stress, channel hot carrier stress showed significant cold carrier injection during hot carrier injection. Using a relaxation bias, we are able to evaluate hot carrier induced permanent trap generation by decoupling cold carrier trapping.
Cold Carrier Trapping
Hot Carrier Stresses
Cold Carrier Injection
Hot Carrier Injection
Permanent Trap Generation
Substrate Hot Electron Injection
Materials Science And Technology
Hot Carrier Effects
Semiconductor Device Reliability
High-k Dielectric Thin Films