Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Electron Trapping Processes in High-K Gate Dielectrics and Nature of Traps

By: Gavartin, J.; Sim, J.; Park, C.S.; Young, C.; Bersuker, G.; Choi, R.; Shluger, A.; Lee, B.H.; Nadkarni, S.;

2006 / IEEE / 1-4244-0181-4

Description

This item was taken from the IEEE Conference ' Electron Trapping Processes in High-K Gate Dielectrics and Nature of Traps ' The above results suggest that migration of the electrons, captured during the fast charging process, to other available traps represents the major process responsible for the intrinsic Vt instability in the high-k NMOS transistors. The extracted trap characteristics are consistent with those of the oxygen vacancies in the monoclinic hafnia.