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Fabrication and Performance of Piezoelectric MEMS Tunable Capacitors Constructed with AlN Bimorph Structure
By: Nagano, T.; Kawakubo, T.; Itaya, K.; Abe, K.; Nishigaki, M.;
2006 / IEEE / 0-7803-9541-7
Description
This item was taken from the IEEE Conference ' Fabrication and Performance of Piezoelectric MEMS Tunable Capacitors Constructed with AlN Bimorph Structure ' Fabrication process and electrical performances in a novel piezoelectric tunable capacitor have been studied. The piezoelectric bimorph structure of AlN/Al multilayer was fabricated with CMOS compatible process. The voltage dependence of actuation showed a good agreement with those of theoretical calculation, whereas stress measurements showed that suppression of residual stress in AlN layers was most critical for curling in the beams. Suppression of the distance between capacitor electrodes realized by the folded-beam type design resulted in capacitance tuning ratio of over ten at 3V. High frequency measurements up to 20GHz revealed that the tunable capacitor maintained a capacitive property up to 18GHz.
Related Topics
Piezoelectric Mems Tunable Capacitors
Bimorph Structure
Electrical Performances
Cmos Compatible Process
Voltage Dependence
Stress Measurements
Residual Stress
Capacitor Electrodes
Folded Beam Type Design
Tunable Capacitor
Capacitive Property
3 V
Fabrication
Micromechanical Devices
Capacitors
Nonhomogeneous Media
Cmos Process
Voltage
Stress Measurement
Residual Stresses
Electrodes
Capacitance
Cmos Process
Rf Mems
Surface Micromachining
Piezoelectric Actuator
Tunable Capacitor
High Frequency
Aln-al
Micromechanical Devices
Capacitors
Aluminium Compounds
Piezoelectric Devices
Engineering
High Frequency Measurements