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Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond
By: Lu, J.P.; Miles, D.S.; Montgomery, C.; Mercer, D.; Grider, T.; Johnson, F.S.; Griffin, A.F.Jr.; Lin, B.Y.; Xu, Y.Q.; Hall, L.H.; Liu, X.; Robertson, L.S.; Guldi, R.L.; Corum, D.; Ramappa, D.A.; Obeng, Y.; Mehrad, F.; Yu, S.F.; Crank, S.; Bonifield, T.; Chen, P.J.; Yue, D.F.; DeLoach, J.;
2006 / IEEE / 1-4244-0047-3
This item was taken from the IEEE Conference ' Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond ' As CMOS technologies move into the 90nm node and beyond, nickel (Ni) self-aligned silicide (SALICIDE) is transitioning from R&D into mainstream SC fabrication. In this paper, advantages and challenges of Ni SALICIDE process technology will be reviewed. The extension of Ni SALICIDE technology to fully silicided metal gates (FUSI) will be discussed.
Research And Development
Germanium Silicon Alloys
Fully Silicided Metal Gates
Nickel Self-aligned Silicide
Nickel Salicide Process Technology
Cmos Integrated Circuits