Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond

By: Lu, J.P.; Miles, D.S.; Montgomery, C.; Mercer, D.; Grider, T.; Johnson, F.S.; Griffin, A.F.Jr.; Lin, B.Y.; Xu, Y.Q.; Hall, L.H.; Liu, X.; Robertson, L.S.; Guldi, R.L.; Corum, D.; Ramappa, D.A.; Obeng, Y.; Mehrad, F.; Yu, S.F.; Crank, S.; Bonifield, T.; Chen, P.J.; Yue, D.F.; DeLoach, J.;

2006 / IEEE / 1-4244-0047-3

Description

This item was taken from the IEEE Conference ' Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond ' As CMOS technologies move into the 90nm node and beyond, nickel (Ni) self-aligned silicide (SALICIDE) is transitioning from R&D into mainstream SC fabrication. In this paper, advantages and challenges of Ni SALICIDE process technology will be reviewed. The extension of Ni SALICIDE technology to fully silicided metal gates (FUSI) will be discussed.