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Assessment of Process-Induced Damage in High-κ Transistors

By: Brown, G.A.; Chang Yong Kang; Hokyung Park; Dawei Heh; Neugroschel, A.; Seung Chul Song; Choi, R.; Young, C.D.; Bersuker, G.; Byoung Hun Lee;

2006 / IEEE / 1-4244-0097-X


This item was taken from the IEEE Conference ' Assessment of Process-Induced Damage in High-κ Transistors ' Using a combination of electrical characterization techniques, one can separate contributions from generated and pre-existing electron traps inherent to high-� dielectrics, as well as identify process-induced effects in the device characteristics.