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Impact of plasma induced damage on pMOSFETs with TiN/Hf-silicate stack
By: Lee, B.H.; Zeitzoff, P.; Bersuker, G.; Sassman, B.; Song, S.C.; Zhang, Z.; Bae, S.H.; Sim, J.H.;
2005 / IEEE / 0-7803-8803-8
This item was taken from the IEEE Conference ' Impact of plasma induced damage on pMOSFETs with TiN/Hf-silicate stack ' We report on the plasma induced damage in the TiN/HfSiO/sub 4/ gate stack, and, specifically, its impact on pMOSFETs. Plasma assisted deposition processes after the gate stack etch step appear to cause most plasma damage, manifested by greater degradation of the plate antenna structures (area intensive) compared to comb antennas (perimeter intensive). The transient charge trapping behavior of the HfSiO/sub 4/ film seems to prevent destructive dielectric breakdown. Electrical stress could generate additional traps in the film damaged by the plasma process.
Titanium Nitride/hafnium Silicate Stack
Plasma Assisted Deposition Processes
Plate Antenna Structures
Transient Charge Trapping
Plasma Materials Processing
Plasma Induced Damage