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Multiple independent gate field effect transistor (MIGFET) - multi-fin RF mixer architecture, three independent gates (MIGFET-T) operation and temperature characteristics

By: Yang Du; Kaipat, S.; Mathew, L.; Fossum, J.G.; Zhang, W.; Chowdhury, M.M.; Shi, Z.; Vandooren, A.; Workman, G.O.; Mogah, J.; Nguyen, B.Y.; Moosa, M.; Prabhu, L.; Thean, A.V.Y.; Sanez, J.; Shimer, R.; Sing, D.; Parker, C.; Becker, S.; Rai, R.; Mora, R.; Stephens, T.; Zavala, M.; Sadd, M.;

2005 / IEEE / 4-900784-00-1

Description

This item was taken from the IEEE Conference ' Multiple independent gate field effect transistor (MIGFET) - multi-fin RF mixer architecture, three independent gates (MIGFET-T) operation and temperature characteristics ' MIGFET devices have multiple gates to independently control the channel region. This allows for new device architectures and applications. This paper deals with three novel aspects discussed the first time I) Multi-fin MIGFET device with two independent gates capable of high current drives has been fabricated and demonstrated as a RF Mixer II) For the first time a MOSFET with three independent gates has been fabricated. These devices can be used in single transistor memories III) MIGFET has been used to characterize temperature effects on double gate devices in single electrode and independent gate modes. The three aspects discussed in the paper will have significant impact on future applications of these devices. The MIGFET can be integrated with double gate devices enabling novel analog circuits to scale with multi-gated digital CMOS in future digital CMOS transceiver (Single Chip Radio). The third independent gate in the MIGFET-T device enables novel memory architectures. Temperature characterization reveals the double gate Vt can be shifted both by temperature and by the second gate bias. This data enables compact modeling of temperature effects on independent gate devices to evaluate circuits that take advantage of this characteristic of the MIGFET.