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/spl Omega/FETs transistors with TiN metal gate and HfO/sub 2/ down to 10nm
By: Allain, F.; Papon, A.M.; Garros, X.; Tosti, L.; Vizioz, C.; Brevard, L.; Ritzenthaler, R.; Casse, M.; Faynot, O.; Jahan, C.; Deleonibus, S.; Giffard, B.; Toffoli, A.; Guillaumot, B.; Vinet, M.; Martin, F.; Dansas, H.;
2005 / IEEE / 4-900784-00-1
This item was taken from the IEEE Conference ' /spl Omega/FETs transistors with TiN metal gate and HfO/sub 2/ down to 10nm ' For the first time, TiN metal gate and high K gate dielectric (HfO/sub 2/) have been successfully integrated on non planar /spl Omega/FETs transistors, with gate lengths down to 10nm. NMOS transistors exhibit an excellent I/sub ON//I/sub OFF/ ratio of 5.10/sup 5/, the best value ever reported for a 10nm non planar device. The use of HfO/sub 2/ reduces the gate leakage current by several orders of magnitude, for EOT of 1.92nm. Very low off-currents are measured with high on-currents, demonstrating the interest of such devices for low power applications.
High K Dielectric Materials
High-k Gate Dielectrics
Gate Leakage Current
Tin Metal Gate
/spl Omega/fets Transistors
Field Effect Transistors