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S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond
By: Kim, J.V.; Oh, H.J.; Kinam Kim; Park, Y.J.; Jin, G.Y.; Park, J.C.; Lee, W.S.; Lee, C.S.; Shim, M.S.; Shin, D.W.; Jin, C.; Kim, Y.I.; Jung, M.Y.; Cho, M.H.; Kim, S.B.; Lee, B.H.; Huh, M.; Park, B.J.; Kim, D.I.; Hwang, Y.S.; Park, J.M.; Kang, N.J.; Kim, H.J.; Ha, G.W.; Kim, S.E.; Kim, D.H.; Lee, Y.S.; Woo, D.S.;
2005 / IEEE / 4-900784-00-1
This item was taken from the IEEE Conference ' S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond ' For the first time, S-RCAT (sphere-shaped-recess-channel-array transistor) technology has been successfully developed in a 2Gb density DRAM with 70nm feature size. It is a modified structure of the RCAT (recess-channel-array transistor) and shows an excellent scalability of recessed-channel structure to sub-50nm feature size. The S-RCAT demonstrated superior characteristics in DIBL, subthreshold swing (SW), body effect, junction leakage current and data retention time, comparing to the RCAT structure, in this paper, S-RCAT is proved to be the most promising DRAM array transistor suitable for sub-50nm and mobile applications.
Computer Aided Engineering
Research And Development
Random Access Memory
Data Retention Time
Junction Leakage Current
Insulated Gate Field Effect Transistors
Very Large Scale Integration