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Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates
By: Klymko, N.; Wildman, H.; Rovedo, N.; Fischetti, M.; Jinghong Li; Utomo, H.; Huajie Chen; Panda, S.; Holt, J.; Min Yang; Qiqing Ouyang; Chun-Yung Sung; Meikei Ieong; Ott, J.A.; Bryant, A.; Fried, D.M.; Costrini, G.; Kanarsky, T.;
2005 / IEEE / 4-900784-00-1
This item was taken from the IEEE Conference ' Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates ' CMOS devices with embedded SiGe source/drain for pFETs and tensile stressed liner for nFETs have been demonstrated for the first time on hybrid orientation substrates. Ring oscillators have also been fabricated. Significant performance improvement is observed in hybrid orientation substrates compared to (100) control substrates with embedded SiGe.
Germanium Silicon Alloys
Scanning Electron Microscopy
Tensile Stressed Liner
Hybrid Orientation Substrates
Embedded Sige Source-drain
Cmos Integrated Circuits
Monolithic Integrated Circuits