Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates

By: Klymko, N.; Wildman, H.; Rovedo, N.; Fischetti, M.; Jinghong Li; Utomo, H.; Huajie Chen; Panda, S.; Holt, J.; Min Yang; Qiqing Ouyang; Chun-Yung Sung; Meikei Ieong; Ott, J.A.; Bryant, A.; Fried, D.M.; Costrini, G.; Kanarsky, T.;

2005 / IEEE / 4-900784-00-1

Description

This item was taken from the IEEE Conference ' Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates ' CMOS devices with embedded SiGe source/drain for pFETs and tensile stressed liner for nFETs have been demonstrated for the first time on hybrid orientation substrates. Ring oscillators have also been fabricated. Significant performance improvement is observed in hybrid orientation substrates compared to (100) control substrates with embedded SiGe.