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Embedded SiGe S/D PMOS on thin body SOI substrate with drive current enhancement

By: Zhang, D.; Nguyen, B.Y.; White, T.; Goolsby, B.; Nguyen, T.; Dhandapani, V.; Hildreth, J.; Foisy, M.; Adams, V.; Shiho, Y.; Thean, A.; Theodore, D.; Canonico, M.; Zollner, S.; Bagchi, S.; Murphy, S.; Rai, R.; Jiang, J.; Jahanbani, M.; Noble, R.; Zavala, M.; Cotton, R.; Eades, D.; Parsons, S.; Montgomery, P.; Martinez, A.; Winstead, B.; Mendicino, M.; Cheek, J.; Liu, J.; Grudowski, P.; Ranami, N.; Tomasini, P.; Arena, C.; Werkhoven, C.; Kirby, H.; Chang, C.H.; Lin, C.T.; Tuan, H.C.; See, Y.C.; Venkatesan, S.; Kolagunta, V.; Cave, N.; Mogab, J.;

2005 / IEEE / 4-900784-00-1


This item was taken from the IEEE Conference ' Embedded SiGe S/D PMOS on thin body SOI substrate with drive current enhancement ' We report for the first time PMOS drive current enhancement with in-situ boron doped SiGe incorporation in recessed S/D regions for devices built on thin body SOI substrate. For P-channel PD-SOI devices with 450 A silicon on insulator and 38nm gate length, 35% linear drain current enhancement and 20% saturation drain current improvement have been achieved with this approach. Device integration and performance improvement are discussed below.