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Trapping and detrapping kinetics in metal gate/HfO/sub 2/ stacks
2005 / IEEE / 0-7803-9301-5
This item was taken from the IEEE Conference ' Trapping and detrapping kinetics in metal gate/HfO/sub 2/ stacks ' In this work, we study the trapping and detrapping kinetics over a large range of temperature from 20K to 500K with an appropriate methodology. Through the experimental work, we report, for the first time, the importance of the direct tunneling (especially Shockley-Read-Hall (SRH-like)) mechanism for all operational conditions.
20 To 500 K
Metal Gate Stacks