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A metamorphic GaAs HEMT-distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s photoreceiver

By: Demichel, S.; Happy, H.; Wolf, G.; Dambrine, G.; Lefevre, R.; Blache, F.; Leblane, R.;

2005 / IEEE / 0-7803-9128-4

Description

This item was taken from the IEEE Conference ' A metamorphic GaAs HEMT-distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s photoreceiver ' An eight stage distributed amplifier with 12.5 dB /spl plusmn/ 0.45 dB gain and 50 GHz bandwidth has been demonstrated in a commercially available 0.1 /spl mu/m metamorphic GaAs HEMT (MHEMT) technology. The amplifier has a minimum noise figure lower than 2.5 dB in the bandwidth. The group delay variation, from 9 to 40 GHz is /spl plusmn/ 7.5 ps and circuit consumption is 0.4 W. Such amplifier has been packaged with a high responsivity photodiode into a fiber pig-tailed module. Eye diagrams measurements demonstrate the successful high-speed operation of the photoreceiver.