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Observations of NBTI-induced atomic scale defects

By: Krishnan, A.T.; Lenahan, P.M.; Campbell, J.P.; Krishnan, S.;

2005 / IEEE / 0-7803-8992-1


This item was taken from the IEEE Conference ' Observations of NBTI-induced atomic scale defects ' We utilize a combination of MOSFET gate-controlled diode DC-IV measurements and a very sensitive electron spin resonance technique called spin-dependent recombination to observe and identify defect centers generated by NBTI in fully processed SiO/sub 2/-based pMOSFETs. In SiO/sub 2/ devices, the defects include two Si/ SiO/sub 2/ interface silicon dangling bond centers (P/sub b0/ and P/sub b1/) and may also include an oxide silicon dangling bond center (E'). Our observations suggest that both P/sub b0/ and P/sub b1/ defects play major roles while the E' defect plays a somewhat different role in the SiO/sub 2/ devices.