Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Observations of NBTI-induced atomic scale defects

By: Krishnan, A.T.; Lenahan, P.M.; Campbell, J.P.; Krishnan, S.;

2005 / IEEE / 0-7803-8992-1

Description

This item was taken from the IEEE Conference ' Observations of NBTI-induced atomic scale defects ' We utilize a combination of MOSFET gate-controlled diode DC-IV measurements and a very sensitive electron spin resonance technique called spin-dependent recombination to observe and identify defect centers generated by NBTI in fully processed SiO/sub 2/-based pMOSFETs. In SiO/sub 2/ devices, the defects include two Si/ SiO/sub 2/ interface silicon dangling bond centers (P/sub b0/ and P/sub b1/) and may also include an oxide silicon dangling bond center (E'). Our observations suggest that both P/sub b0/ and P/sub b1/ defects play major roles while the E' defect plays a somewhat different role in the SiO/sub 2/ devices.