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A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs
By: Jaesung Sim; Byeongin Choi; Kim, V.; Jongsun Sel; Ki-Tae Park; Jang-Sik Lee; Dongchan Kim; Changhyun Lee; Changseok Kang; Jungdal Choi; Yoocheol Shin; Kinam Kim; Hag-ju Cho;
2005 / IEEE / 0-7803-9268-X
This item was taken from the IEEE Conference ' A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs '
Integrated Circuit Technology
Research And Development
High K Dielectric Materials
Nand Flash Technology
Optimized Cell Structures
Multigigabit Flash Eeprom
Nand-type Monos Memory