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High performance cmos bulk technology using direct silicon bond (dsb) mixed crystal orientation substrates

By: Saenger, K.L.; Pfeiffer, G.; Ng, H.Y.; Haizhou Yin; Chun-Yung Sung; Wann, C.H.; Zhibin Ren; Rong Zhang; de Souza, J.P.; Sadana, D.; Rovedo, N.; Raccioppo, M.; Chan, V.; Nguyen, P.Y.; Mo, R.T.; Madan, A.; Zhijiong Luo; Lee, H.K.; Ku, V.; Kempisty, J.J.; Bendernagel, R.; Ott, J.A.; Jinghong Li; Crowder, S.W.;

2005 / IEEE / 0-7803-9268-X

Description

This item was taken from the IEEE Conference ' High performance cmos bulk technology using direct silicon bond (dsb) mixed crystal orientation substrates '