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Advantages of B/sub 18/H/sub 22/ ion implantation and influence on PMOS reliability
By: Eimori, T.; Horita, K.; Kawasaki, Y.; Ishibashi, M.; Ohji, Y.; Kuroi, T.; Togawa, M.; Hayashi, T.; Shiga, K.; Yamashita, T.;
2005 / IEEE / 4-9902158-6-9
Description
This item was taken from the IEEE Conference ' Advantages of B/sub 18/H/sub 22/ ion implantation and influence on PMOS reliability ' In this paper, the impact of cluster ion (B/sub 18/H/sub x//sup +/) implantation on SDE formation are investigated in detail. It has been shown that B/sub 18/H/sub x//sup +/ ion implantation not only can make ultra-shallow junction for 45 nm node and beyond and but also has self-amorphization property and can reduce the channeling tail in the boron distribution without pre-amorphization implantation. In addition, B/sub 18/H/sub x//sup +/ ion implantation can be expected to reduce a fluctuation of MOSFETs, compared with B/sup +/ implantation. Cluster implantation is the reliability issue by hydrogen atom, because a large amount of hydrogen atoms are simultaneously introduced with boron into the silicon substrate. Moreover, neither the increase of junction leakage current nor influences of hydrogen which is introduced during B/sub 18/H/sub x//sup +/ implantation on PMOS reliability does not occur. The amorphization effect are evaluated by TEM observation and boron and hydrogen profiles by SIMS analysis.
Related Topics
Silicon
Si:b/sub 18/h/sub X/
Pmos Reliability
Cluster Ion Implantation
Ultra-shallow Junction
Self-amorphization Property
Boron Distribution
Mosfet
Hydrogen Atom
Silicon Substrate
Tem
Sims Analysis
P-n Junctions
Leakage Currents
Ion Implantation
Leakage Current
Implants
Annealing
Space Charge
Image Restoration
Boron
Mosfet Circuits
Current Measurement
Crystallization
Leakage Currents
Semiconductor Device Reliability
Secondary Ion Mass Spectra
Transmission Electron Microscopy
Amorphisation
P-n Junctions
Mosfet
Ion Implantation
Boron Compounds
Elemental Semiconductors
Engineering
Ion Implantation