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Evaluation and integration of metal gate electrodes for future generation dual metal CMOS
By: Ramiller, C.; Lee, B.H.; Song, S.C.; Senzaki, Y.; Luan, H.; Wen, H.C.; Lysaght, P.; Harris, R.; Choi, K.; Alshareef, H.; Majhi, P.;
2005 / IEEE / 0-7803-9081-4
This item was taken from the IEEE Conference ' Evaluation and integration of metal gate electrodes for future generation dual metal CMOS ' An overview of factors that contribute to the effective work function of metal gate electrodes are presented and reasons for disparity in reported values for effective work function of similar metals from different groups are discussed. Utilizing a standardized technique to accurately extract the effective work function of metal gates, the potential of amorphous metal gate materials and hafnium-based electrodes is presented. Also, the influence of metal gate materials and processing on the physical and electrical stability of the high-k metal gate stacks are discussed.
High-k Gate Dielectrics
High K Dielectric Materials
Channel Bank Filters
Amorphous Metal Gate Material
Dual Metal Cmos
Metal Gate Electrodes
Cmos Integrated Circuits