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The electrical properties of glass like insulator prepared by solution process and its application for organic electronic devices
By: Matsukawa, N.; Karasawa, H.; Itoh, E.; Miyairi, K.;
2005 / IEEE / 4-88686-063-X
This item was taken from the IEEE Conference ' The electrical properties of glass like insulator prepared by solution process and its application for organic electronic devices ' We have fabricated the new type of glass (SiO/sub 2/) like thin film insulator called polysilsesquioxane (POSS) and by spin coating or electro-plating technique followed by a heat-treatment between 150 and 450 /spl deg/C. Our new type of material, ionic-form silsesquioxane enables us to fabricate a SiO/sub 2/ film with low temperature heat-treatment of less than 200 /spl deg/C compared to non-ionic soluble polysilsesquioxane. It was found that the electrical insulating of POSS film strongly depends on the heat-treatment condition, in other words, the network-formation. Finally, the POSS films were then applied to the organic field effect transistors as a gate insulator.
Insulating Thin Films
Glass Like Insulator
Organic Electronic Devices
Electrical Insulating Films
Organic Field Effect Transistors
Dielectrics And Electrical Insulation
Thin Film Devices
Thin Film Transistors
Organic Thin Film Transistors
Organic Insulating Materials
Field Effect Transistors