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The electrical properties of glass like insulator prepared by solution process and its application for organic electronic devices

By: Matsukawa, N.; Karasawa, H.; Itoh, E.; Miyairi, K.;

2005 / IEEE / 4-88686-063-X

Description

This item was taken from the IEEE Conference ' The electrical properties of glass like insulator prepared by solution process and its application for organic electronic devices ' We have fabricated the new type of glass (SiO/sub 2/) like thin film insulator called polysilsesquioxane (POSS) and by spin coating or electro-plating technique followed by a heat-treatment between 150 and 450 /spl deg/C. Our new type of material, ionic-form silsesquioxane enables us to fabricate a SiO/sub 2/ film with low temperature heat-treatment of less than 200 /spl deg/C compared to non-ionic soluble polysilsesquioxane. It was found that the electrical insulating of POSS film strongly depends on the heat-treatment condition, in other words, the network-formation. Finally, the POSS films were then applied to the organic field effect transistors as a gate insulator.