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Mobility evaluation in high-k devices [MOSFETs]

By: Zeitzoff, P.; Bersuker, G.; Young, C.D.; Brown, G.; Choi, R.; Lee, B.H.; Sim, J.H.;

2004 / IEEE / 0-7803-8517-9

Description

This item was taken from the IEEE Conference ' Mobility evaluation in high-k devices [MOSFETs] ' Fast electron trapping in the high-k gate dielectrics is shown to effectively increase the magnitude of the threshold voltage during the DC measurements of the drain current, which leads to underestimation of the intrinsic channel carrier mobility. An approach based on the pulse I/sub d/-V/sub g/ technique is proposed to estimate a correction factor to the DC mobility.