Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Mobility evaluation in high-k devices [MOSFETs]

By: Zeitzoff, P.; Bersuker, G.; Young, C.D.; Brown, G.; Choi, R.; Lee, B.H.; Sim, J.H.;

2004 / IEEE / 0-7803-8517-9


This item was taken from the IEEE Conference ' Mobility evaluation in high-k devices [MOSFETs] ' Fast electron trapping in the high-k gate dielectrics is shown to effectively increase the magnitude of the threshold voltage during the DC measurements of the drain current, which leads to underestimation of the intrinsic channel carrier mobility. An approach based on the pulse I/sub d/-V/sub g/ technique is proposed to estimate a correction factor to the DC mobility.