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Atomic scale defects involved in NBTI [MOSFET reliability]

By: Krishnan, A.T.; Lenahan, P.M.; Campbell, J.P.; Krishnan, S.;

2004 / IEEE / 0-7803-8517-9


This item was taken from the IEEE Conference ' Atomic scale defects involved in NBTI [MOSFET reliability] ' The atomic scale defect physics responsible for the negative bias temperature instability (NBTI) phenomenon are not well understood. In this study, we use a highly sensitive form of electron spin resonance (ESR) called spin dependent recombination (SDR) to investigate the chemical and physical nature of the defects responsible for NBTI. We show that P/sub b0/ centers, and Si/SiO/sub 2/ interface silicon dangling bond defects, play a major role in the interface state generation process in NBTI.