Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
MOSFETs and high-speed photodetectors on Ge-on-insulator substrates fabricated using rapid melt growth
2004 / IEEE / 0-7803-8684-1
This item was taken from the IEEE Conference ' MOSFETs and high-speed photodetectors on Ge-on-insulator substrates fabricated using rapid melt growth ' We have developed a novel rapid melt growth technique to produce Ge-on-insulator (GeOI) substrates with very high quality. P-channel MOSFETs, tri-gate MOS transistors and p-i-n photodetectors were fabricated with these GeOI structures. The entire process flow for these devices is fully compatible with base-line Si CMOS fabrication. The high E/sub Eff/ hole mobility of the pMOSFETs was estimated to be 120cm/sup 2//Vs, comparable to the reported results with bulk Ge wafers. The fabricated photodetectors showed high responsivity and very fast impulse response.
Rapid Melt Growth Fabrication
Tri-gate Mos Transistors
Si Cmos Fabrication
Optical Device Fabrication
Cmos Integrated Circuits
Monolithic Integrated Circuits