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MOSFETs and high-speed photodetectors on Ge-on-insulator substrates fabricated using rapid melt growth

By: Gopalakrishnan, K.; Yaocheng Liu; Plummer, J.D.; Deal, M.D.; Kai Ma; Griffin, P.B.;

2004 / IEEE / 0-7803-8684-1

Description

This item was taken from the IEEE Conference ' MOSFETs and high-speed photodetectors on Ge-on-insulator substrates fabricated using rapid melt growth ' We have developed a novel rapid melt growth technique to produce Ge-on-insulator (GeOI) substrates with very high quality. P-channel MOSFETs, tri-gate MOS transistors and p-i-n photodetectors were fabricated with these GeOI structures. The entire process flow for these devices is fully compatible with base-line Si CMOS fabrication. The high E/sub Eff/ hole mobility of the pMOSFETs was estimated to be 120cm/sup 2//Vs, comparable to the reported results with bulk Ge wafers. The fabricated photodetectors showed high responsivity and very fast impulse response.