Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Experimental determination of mobility scattering mechanisms in Si/HfO/sub 2//TiN and SiGe:C/HfO/sub 2//TiN surface channel n- and p-MOSFETs

By: Guillaumot, B.; Ghibaudo, G.; Leroux, C.; Romanjek, K.; Thevenod, L.; Militaru, L.; Papon, A.-M.; Martin, F.; Lafond, D.; Hartmann, J.-M.; Damlencourt, J.-F.; Ducroquet, F.; Mitard, J.; Ernst, T.; Casse, M.; Andrieu, F.; Weber, O.; Deleonibus, S.;

2004 / IEEE / 0-7803-8684-1

Description

This item was taken from the IEEE Conference ' Experimental determination of mobility scattering mechanisms in Si/HfO/sub 2//TiN and SiGe:C/HfO/sub 2//TiN surface channel n- and p-MOSFETs ' We demonstrate by an extensive experimental study of HfO/sub 2//TiN and SiO/sub 2//TiN gate stacked-transistors compared with the SiO/sub 2//poly-Si reference, that the hole mobility is mainly degraded by the surface roughness (SR) linked to the presence of TiN. We thus propose high mobility SiGe or SiGe:C surface channel pMOSFETs with HfO/sub 2//TiN gate stacks using an adequate valence band engineering near the dielectric/channel interface (up to 100% hole mobility enhancement at E/sub eff/ = 1 MV/cm). On the other hand, the electron mobility with HfO/sub 2//TiN gate stacks is reduced by remote Coulomb scattering (RCS).