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A 0.13/spl mu/m MRAM with 0.26/spl times/0.44/spl mu/m/sup 2/ MTJ optimized on universal MR-RA relation for 1.2V high-speed operation beyond 143MHz

By: Ueno, S.; Ohji, Y.; Kuroiwa, T.; Furuta, H.; Tsuchimoto, J.; Maejima, S.; Iida, S.; Ohshita, H.; Hasegawa, S.; Hirano, S.; Yamaguchi, T.; Kurisu, H.; Yutani, A.; Hashikawa, N.; Maeda, H.; Ogawa, Y.; Kawabata, K.; Okumura, Y.; Tsuji, T.; Ohtani, J.; Tanizaki, T.; Yamaguchi, Y.; Ohishi, T.; Hidaka, H.; Takenaga, T.; Beysen, S.; Kobayashi, H.; Oomori, T.; Koga T; Eimori, T.;

2004 / IEEE / 0-7803-8684-1

Description

This item was taken from the IEEE Conference ' A 0.13/spl mu/m MRAM with 0.26/spl times/0.44/spl mu/m/sup 2/ MTJ optimized on universal MR-RA relation for 1.2V high-speed operation beyond 143MHz ' A 0.13/spl mu/m magnetoresistive random access memory (MRAM) with 0.26/spl times/0.44/spl mu/m/sup 2/ magnetic-tunneling-junction (MTJ) is presented for 1.2V high-speed operation beyond 143MHz, where MTJ parameters are best-tuned for its maximum performance. We have found that there is a universal relationship between magneto-resistance (MR) and resistance-area products (RA) for MTJs with CoFe/AlO/sub x/ material system, and the universality is extrapolated upwards by CoFeB/AlO/sub x/ material system. Best MR-RA combination is realized on this universality. A 5.2ns sensing is demonstrated by a 0.13/spl mu/m MRAM with optimized MTJ. This advanced MRAM also shows good reliability for endurance/retention characteristics and strong access immunity in high temperature up to 150/spl deg/C.