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Charge trapping effects in HfSiON dielectrics on the ring oscillator circuit and the single stage inverter operation
By: Lee, B.H.; Young, C.; Sim, J.H.; Choi, R.; Lee, J.C.; Kang, C.Y.; Bersuker, G.;
2004 / IEEE / 0-7803-8684-1
This item was taken from the IEEE Conference ' Charge trapping effects in HfSiON dielectrics on the ring oscillator circuit and the single stage inverter operation ' For the first time, the effects of fast transient charge trapping in high-k devices on ring oscillator circuit operation are reported in comparison with SiO/sub 2/ devices. At high V/sub dd/ regime, the propagation delay for high-k devices was shorter than that of SiO/sub 2/. However, at low V/sub dd/, high-k devices show longer propagation delay. These results suggest that the performance of high-k device is improved significantly in the high-speed circuits, where the fast transient charge trapping can be negligible. Single pulse measurement and single stage inverter analysis support that the fast transient charge trapping effects can be negligible at higher frequency and the fast transition can exclude charge-trapping effects on the circuit operation.
Single Pulse Measurement
Single Stage Inverter Analysis
Fast Transient Charge Trapping Effects
High-k Gate Dielectrics
High K Dielectric Materials
Single Stage Inverter Operation