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Charge trapping effects in HfSiON dielectrics on the ring oscillator circuit and the single stage inverter operation

By: Lee, B.H.; Young, C.; Sim, J.H.; Choi, R.; Lee, J.C.; Kang, C.Y.; Bersuker, G.;

2004 / IEEE / 0-7803-8684-1

Description

This item was taken from the IEEE Conference ' Charge trapping effects in HfSiON dielectrics on the ring oscillator circuit and the single stage inverter operation ' For the first time, the effects of fast transient charge trapping in high-k devices on ring oscillator circuit operation are reported in comparison with SiO/sub 2/ devices. At high V/sub dd/ regime, the propagation delay for high-k devices was shorter than that of SiO/sub 2/. However, at low V/sub dd/, high-k devices show longer propagation delay. These results suggest that the performance of high-k device is improved significantly in the high-speed circuits, where the fast transient charge trapping can be negligible. Single pulse measurement and single stage inverter analysis support that the fast transient charge trapping effects can be negligible at higher frequency and the fast transition can exclude charge-trapping effects on the circuit operation.