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A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs
By: Kim, D.H.; Kim, J.Y.; Kim, K.; Park, Y.G.; Jin, G.Y.; Choi, W.T.; Park, S.J.; Hyung, Y.W.; Lee, J.B.; Ahn, T.H.; Yoon, K.H.; Jeong, S.S.; Seo, J.W.; Shin, J.C.; Kim, H.J.; Lee, Y.S.; Kim, Y.I.; Jeong, M.Y.; Woo, D.S.; Kim, H.J.; Oh, H.J.; Park, B.J.; Kwon, J.M.; Kim, S.E.; Huh, M.; Hwang, Y.S.; Park, J.M.; Han, D.H.; Kim, D.I.; Cho, M.H.; Lee, B.H.; Hwang, H.K.; Song, J.W.; Kang, N.J.; Ha, G.W.; Song, S.S.; Shim, M.S.;
2004 / IEEE / 0-7803-8684-1
This item was taken from the IEEE Conference ' A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs ' Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si/sub 3/N/sub 4/, has been successfully developed on 80nm COB DRAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) DRAMs.
Virtually Unlimited Height
Si/sub 3/n/sub 4/
Semiconductor Device Manufacture
Random Access Memory
One Cylindrical Storage Node Dram
Mis Dielectric Technology