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Smart Cut/spl trade/ transfer of 300 mm  and (100) Si layers for hybrid orientation technology
By: Charvet, A.-M.; Papon, A.-M.; Lagahe-Blanchard, C.; Suciu, G.; Ben Mohamed, N.; Beaumont, A.; Neyret, E.; Delprat, D.; Letertre, F.; Sousbie, N.; Akatsu, T.; Bourdelle, K.K.; Mazure, C.; Maleville, C.; Kernevez, N.;
2004 / IEEE / 0-7803-8497-0
This item was taken from the IEEE Conference ' Smart Cut/spl trade/ transfer of 300 mm  and (100) Si layers for hybrid orientation technology ' In hybrid-orientation technology (HOT), devices are fabricated on hybrid substrate with  and (100) orientations to achieve significant PMOS performance enhancement. Smart cut process is an important step in the substrate engineering for HOT. We investigate the details of layer transfer in the substrates of different orientations and presents the characteristics of product  SOI wafers. For the first time, we show that H platelet distributions, splitting kinetics and evolution of post-split surface morphology demonstrate strong substrate orientation dependence. Certain modifications of critical process steps in generic smart cut process flow are required to fabricate high quality  SOI wafers.
Generic Smart Cut Process Flow
Substrate Orientation Dependence
Post-split Surface Morphology
H Platelet Distribution
 Soi Wafers Fabrication
Hybrid Orientation Technology
Smart Cut/spl Trade/ Si Layer Transfer