Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Relaxation of FN stress induced V/sub th/ shift at NMOSFETs with HfSiON gate dielectric and TiN gate electrode

By: Bersuker, G.; Sim, J.H.; Matthews, K.; Byoung Hun Lee; Rino Choi; Lee, J.C.; Larson, L.;

2004 / IEEE / 0-7803-8284-6

Description

This item was taken from the IEEE Conference ' Relaxation of FN stress induced V/sub th/ shift at NMOSFETs with HfSiON gate dielectric and TiN gate electrode ' Hafnium based materials like hafnium silicate (HfSiON) have been studied intensively for replacing conventional SiO/sub 2/, as gate dielectrics. In addition to dielectric breakdown and other wearout characteristics, threshold voltage shift (Vth) caused by electrical stress is one of the major reliability concerns. In this work, it has been found that a significant portion of V/sub th/ shift, induced by Fowler-Nordheim (FN) stress, is actually reversible. The origin of this V/sub th/ instability has been investigated and its implications on conventional reliability tests are discussed.