Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]

By: Pompl, T.; Young, C.; Huff, H.R.; Diebold, A.; Hung, P.Y.; Price, J.; Zeitzoff, P.M.; Bersuker, G.; Li, H.-J.; Brown, G.A.; Gardner, M.; Peterson, J.; Saulters, J.; Rhoad, T.;

2004 / IEEE / 0-7803-8284-6

Description

This item was taken from the IEEE Conference ' N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application] ' A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO/sub 2/, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO/sub 2/. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO/sub 2/ film by the presence of N in the HfON film.