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A cavity channel SESO embedded memory with low standby-power techniques
By: Yano, K.; Sano, T.; Kameshiro, N.; Mine, T.; Watanabe, T.; Ishii, T.; Atwood, B.;
2004 / IEEE / 0-7803-8480-6
This item was taken from the IEEE Conference ' A cavity channel SESO embedded memory with low standby-power techniques ' A 22F/sup 2/ 3-transistor dynamic memory cell, based on a newly fabricated cavity channel SESO (single-electron shutoff) transistor is proposed for low-power mobile SOCs. The ultra-low leakage SESO device is formed above the bulk devices to yield the small cell size. With low-power techniques, this memory can achieve nearly an order of magnitude lower standby power than conventional memory. A 1 Mbyte SESO embedded memory core is estimated to have a standby power consumption of 24.2 /spl mu/A in a 90 nm process.
Cavity Channel Seso Transistor
Dynamic Memory Cell
Single-electron Shutoff Transistor
Low Standby-power Consumption
Ultra-low Leakage Seso Device
Small Cell Size
Embedded Memory Core
Random Access Memory
Single Electron Transistors
Thin Film Transistors
Low-power Mobile Soc