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Charge-injection length in silicon nanocrystal memory cells

By: Yano, K.; Ikeda, Y.; Saeki, S.; Kurata, H.; Fukumura, T.; Osabe, T.; Arigane, T.; Sano, T.; Mine, T.; Ishii, T.;

2004 / IEEE / 0-7803-8289-7


This item was taken from the IEEE Conference ' Charge-injection length in silicon nanocrystal memory cells ' We present the first experimental investigation of the lateral charge-injection length for silicon nanocrystal memory cells programmed with source-side injection (SSI). Charge-pumping measurements reveal that the injection length of SSI programming is reducible to 24 nm and suggest the possibility of scaling down the nanocrystal memory for 2-bit/cell operation to the 90-65-nm range of technology nodes.