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A model for negative bias temperature instability (NBTI) in oxide and high /spl kappa/ pFETs 13/spl times/-C6D8C7F5F2

By: Tak Ning; Callegari, A.; Stathis, J.; Lee, B.H.; Zafar, S.;

2004 / IEEE / 0-7803-8289-7

Description

This item was taken from the IEEE Conference ' A model for negative bias temperature instability (NBTI) in oxide and high /spl kappa/ pFETs 13/spl times/-C6D8C7F5F2 ' A model for the negative bias temperature instability (NBTI) is proposed. Unlike previous empirical models, this model is derived from physics principles. The model attributes NBTI to de-passivation of SiO/sub 2//Si interface and its two distinguishing features are: application of statistical mechanics to calculate depassivated site density increase and the assumption that the hydrogen diffusion is dispersive. The model is verified using new and published NBTI data for SiO/sub 2//poly, SiON/W and HfO/sub 2//W pFETs. A comparison between high /spl kappa/ and conventional oxide is made.