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Dielectric breakdown mechanism of HfSiON/SiO/sub 2/ gate dielectric
2004 / IEEE / 0-7803-8289-7
This item was taken from the IEEE Conference ' Dielectric breakdown mechanism of HfSiON/SiO/sub 2/ gate dielectric ' The breakdown mechanism of HfSiON/SiO/sub 2/ gate stacks is discussed, based on studies of the band diagram, carrier separation and charge pumping measurements. We found that both holes and electrons contribute to BD and therefore the combination of the stress polarity and the device type should be chosen carefully to evaluate the reliability.
Hfsion/sio/sub 2/ Gate Dielectric
Charge Pumping Measurements
Charge Carrier Processes
Integrated Circuit Reliability
Dielectric Breakdown Mechanism