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55nm high mobility SiGe(:C) pMOSFETs with HfO/sub 2/ gate dielectric and TiN metal gate for advanced CMOS
By: Toffoli, A.; Besson, P.; Dansas, H.; Papon, A.-M.; Guillaumot, B.; Brevard, L.; Hartmann, J.-M.; Damlencourt, J.-F.; Andrieu, F.; Ernst, T.; Ducroquet, F.; Weber, O.; Deleonibus, S.; Morand, Y.; Martin, F.;
2004 / IEEE / 0-7803-8289-7
This item was taken from the IEEE Conference ' 55nm high mobility SiGe(:C) pMOSFETs with HfO/sub 2/ gate dielectric and TiN metal gate for advanced CMOS ' For the first time, MOS transistors with compressively strained SiGe(:C) channel, metal gate and high-k dielectric are demonstrated down to 55nm gate length. SiGe(:C) surface channel pMOSFETs with HfO/sub 2/ gate dielectric exhibit a 10/sup 4/ gate leakage reduction and a 65% mobility enhancement at high transverse effective field (1MV/cm) when compared to the universal SiO/sub 2//Si reference. With such a thin Equivalent Oxide Thickness (EOT= 16-18/spl Aring/), this represents the best gate leakage/mobility trade-off ever published.
Germanium Silicon Alloys
Chemical Vapor Deposition
High-k Gate Dielectrics
High Transverse Effective Field
Tin Metal Gate
Hfo/sub 2/ Gate Dielectric
55nm High Mobility Sige(:c) Pmosfets
High Electron Mobility Transistors
Cmos Integrated Circuits