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Hot carrier reliability of HfSiON PMOSFETs with TiN gate

By: Bersuker, G.; Zeitzoff, P.; Matthews, K.; Choi, R.; Lee, B.H.; Sim, J.H.;

2004 / IEEE / 0-7803-8454-7


This item was taken from the IEEE Conference ' Hot carrier reliability of HfSiON PMOSFETs with TiN gate ' Study of the hot carrier (HC) stress of short channel PMOSFETs with the HfSiON gate dielectric and TiN gate electrodes demonstrated greater degradation of high-k/metal gate vs. SiO/sub 2//poly devices. Transient charging at the drain corner of HfSiON layer is proposed to explain the near-absence of the well-defined peak in the substrate current dependence on gate voltage, which is characteristic to SiO/sub 2/ dielectrics.