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Hot carrier reliability of HfSiON PMOSFETs with TiN gate
2004 / IEEE / 0-7803-8454-7
This item was taken from the IEEE Conference ' Hot carrier reliability of HfSiON PMOSFETs with TiN gate ' Study of the hot carrier (HC) stress of short channel PMOSFETs with the HfSiON gate dielectric and TiN gate electrodes demonstrated greater degradation of high-k/metal gate vs. SiO/sub 2//poly devices. Transient charging at the drain corner of HfSiON layer is proposed to explain the near-absence of the well-defined peak in the substrate current dependence on gate voltage, which is characteristic to SiO/sub 2/ dielectrics.
Dielectric Thin Films
Semiconductor Device Metallisation
Hot Carrier Reliability
Tin Gate Electrodes
High-k/metal Gate Degradation
Hot Carrier Stress
Short Channel Pmosfet
Hfsion Gate Dielectric
Sio/sub 2//poly Devices
Drain Corner Transient Charging
Substrate Current Gate Voltage Dependence
High K Dielectric Materials
High-k Gate Dielectrics
Cmos Integrated Circuits
Semiconductor Device Measurement