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Polarity dependence of FN stress induced degradation on NMOSFETs with polysilicon gate and HfSiON gate dielectrics
By: Brown, G.; Lee, B.H.; Choi, R.; Lee, J.C.; Sim, J.H.; Zeitzoff, P.;
2004 / IEEE / 0-7803-8454-7
Description
This item was taken from the IEEE Conference ' Polarity dependence of FN stress induced degradation on NMOSFETs with polysilicon gate and HfSiON gate dielectrics ' Polarity dependent FN stress induced degradation was observed on NMOSFETs having a polysilicon gate and HfSiON gate dielectric. Positive bias stress (substrate injection) showed more degradation on the bulk region of high-k at the near valence band edge region and low-voltage stress induced leakage current behavior was observed around the flatband voltage. Negative bias stress (gate injection) degraded a wider energy range and in a lower energy band region than positive stress. Therefore, the gate injection case caused worse degradation in terms of interface state density and subthreshold swing than the substrate injection case.
Related Topics
Flatband Voltage
Negative Bias Stress
Gate Injection
Energy Band Region
Interface State Density
Subthreshold Swing
Stress
Degradation
Mosfets
Dielectric Substrates
High-k Gate Dielectrics
Interface States
High K Dielectric Materials
Annealing
Mocvd
Charge Pumps
Engineering
Interface States
Semiconductor Device Measurement
Mosfet
Silicon
Elemental Semiconductors
Hafnium Compounds
Dielectric Thin Films
Leakage Currents
Hfsion-si
Polarity Dependent Fn Stress Induced Degradation
Low-voltage Stress Induced Leakage Current
Near Valence Band Edge Region
Bulk Region
Substrate Injection
Positive Bias Stress
Nmosfet
Polysilicon Gate
Gate Dielectric