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Polarity dependence of FN stress induced degradation on NMOSFETs with polysilicon gate and HfSiON gate dielectrics

By: Brown, G.; Lee, B.H.; Choi, R.; Lee, J.C.; Sim, J.H.; Zeitzoff, P.;

2004 / IEEE / 0-7803-8454-7

Description

This item was taken from the IEEE Conference ' Polarity dependence of FN stress induced degradation on NMOSFETs with polysilicon gate and HfSiON gate dielectrics ' Polarity dependent FN stress induced degradation was observed on NMOSFETs having a polysilicon gate and HfSiON gate dielectric. Positive bias stress (substrate injection) showed more degradation on the bulk region of high-k at the near valence band edge region and low-voltage stress induced leakage current behavior was observed around the flatband voltage. Negative bias stress (gate injection) degraded a wider energy range and in a lower energy band region than positive stress. Therefore, the gate injection case caused worse degradation in terms of interface state density and subthreshold swing than the substrate injection case.