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Polarity dependence of FN stress induced degradation on NMOSFETs with polysilicon gate and HfSiON gate dielectrics
2004 / IEEE / 0-7803-8454-7
This item was taken from the IEEE Conference ' Polarity dependence of FN stress induced degradation on NMOSFETs with polysilicon gate and HfSiON gate dielectrics ' Polarity dependent FN stress induced degradation was observed on NMOSFETs having a polysilicon gate and HfSiON gate dielectric. Positive bias stress (substrate injection) showed more degradation on the bulk region of high-k at the near valence band edge region and low-voltage stress induced leakage current behavior was observed around the flatband voltage. Negative bias stress (gate injection) degraded a wider energy range and in a lower energy band region than positive stress. Therefore, the gate injection case caused worse degradation in terms of interface state density and subthreshold swing than the substrate injection case.
Negative Bias Stress
Energy Band Region
Interface State Density
High-k Gate Dielectrics
High K Dielectric Materials
Semiconductor Device Measurement
Dielectric Thin Films
Polarity Dependent Fn Stress Induced Degradation
Low-voltage Stress Induced Leakage Current
Near Valence Band Edge Region
Positive Bias Stress